IIT Publications Search

Bourlier Y., Bouttemy M., Fregnaux M., Patard O., Gamarra P., Piotrowicz S., Delage S., Etcheberry A.
In-depth analysis of InAlN/GaN HEMT heterostructure after annealing using angle-resolved X-ray photoelectron spectroscopy
Surface and Interface Analysis, vol. 52, (no. 12), pp. 914-918
DOI 10.1002/sia.6857 Conference Paper Journal
Potier C., Jacquet J.-C., Lacam C., Michel N., Dua C., Oualli M., Delage S.L., Piotrowicz S., Chang C., Patard O., Trinh-Xuan L., Gruenenpuett J., Gamarra P., Altuntas P., Chartier E.
10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology
2019 49th European Microwave Conference, EuMC 2019, pp. 824-827
DOI 10.23919/EuMC.2019.8910887 Conference Paper Conference
Aroulanda S., Patard O., Altuntas P., Michel N., Pereira J., Lacam C., Gamarra P., Delage S.L., Defrance N., De Jaeger J.-C., Gaquiere C.
Cl2/Ar based atomic layer etching of AlGaN layers
Journal of Vacuum Science and Technology A, vol. 37, (no. 4)
Malmros A., Gamarra P., Thorsell M., Hjelmgren H., Lacam C., Delage S.L., Zirath H., Rorsman N.
Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs with an AlGaN Back Barrier
IEEE Transactions on Electron Devices, vol. 66, (no. 1), pp. 364-371
Mohamad R., Chauvat M.P., Kret S., Gamarra P., Delage S., Hounkpati V., Lacam C., Chen J., Ruterana P.
The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer
Journal of Applied Physics, vol. 125, (no. 21)
Mohamad R., Bere A., Hounkpati V., Gamarra P., Chen J., Ruterana P.
A Theoretical Investigation of the Miscibility and Structural Properties of InxAlyGa1−x−yN Alloys
Physica Status Solidi (B): Basic Research, vol. 255, (no. 5)
Potier C., Piotrowicz S., Patard O., Gamarra P., Altuntas P., Chartier E., Dua C., Jacquet J.C., Lacam C., Michel N., Oualli M., Delage S.L., Chang C., Gruenenpuett J.
First results on Ka band MMIC power amplifiers based on InAlGaN/GaN HEMT technology
International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMIC 2018 - Proceedings
DOI 10.1109/INMMIC.2018.8430000 Conference Paper Conference
Piotrowicz S., Jacquet J.-C., Gamarra P., Patard O., Dua C., Chartier E., Michel N., Oualli M., Lacam C., Potier C., Altuntas P., Delage S.
InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications
International Journal of Microwave and Wireless Technologies, vol. 10, (no. 1), pp. 39-46
Bourlier Y., Bouttemy M., Patard O., Gamarra P., Piotrowicz S., Vigneron J., Aubry R., Delage S., Etcheberry A.
Investigation of InAlN layers surface reactivity after thermal annealings: A complete XPS study for HEMT
ECS Journal of Solid State Science and Technology, vol. 7, (no. 6), pp. P329-P338
Minj A., Ammar H.B., Cros A., Garro N., Gamarra P., Delage S.L., Ruterana P.
Probing the Local Electrical Properties of Al(In,Ga)N by Kelvin Probe Force Microscopy
Physica Status Solidi (B): Basic Research, vol. 255, (no. 5)
Oualli M., Dua C., Patard O., Altuntas P., Piotrowicz S., Gamarra P., Lacam C., Jacquet J.-C., Teisseire L., Lancereau D., Chartier E., Potier C., Delage S.L.
Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes
Microelectronics and Reliability, vol. 88-90, pp. 418-422
Vilalta-Clemente A., Naresh-Kumar G., Nouf-Allehiani M., Gamarra P., di Forte-Poisson M.A., Trager-Cowan C., Wilkinson A.J.
Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films
Acta Materialia, vol. 125, pp. 125-135
Ben Ammar H., Minj A., Gamarra P., Lacam C., Tordjman M., di Forte-Poisson M.A., Morales M., Chauvat M.P., Ruterana P.
Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure
Physica Status Solidi (A) Applications and Materials, vol. 214, (no. 4)
Rzin M., Routoure J.-M., Guillet B., Mechin L., Morales M., Lacam C., Gamarra P., Ruterana P., Medjdoub F.
Impact of Gate-Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs
IEEE Transactions on Electron Devices, vol. 64, (no. 7), pp. 2820-2825
Gamarra P., Lacam C., Tordjman M., Medjdoub F., di Forte-Poisson M.-A.
In-situ passivation of quaternary barrier InAlGaN/GaN HEMTs
Journal of Crystal Growth, vol. 464, pp. 143-147