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Paolo Paletti

Post Doc
2D Materials Engineering
Research center
About
Education

Title: Doctor of Philosophy
Institute: University of Notre Dame
Location: Notre Dame, IN
Country: USA
From: 2014 To: 2019

Title: Master of Science
Institute: University of Pisa
Location: Pisa
Country: Italy
From: 2006 To: 2013

Experience External

Title: IBM Global Internship Program
Institute: IBM
Location: Zurich
Country: Switzerland
From: 2016 To: 2016

Title: Graduate Research Assistant
Institute: University of Notre Dame
Location: Notre Dame, IN
Country: USA
From: 2014 To: 2019

Title: Research Assistant
Institute: University of Pisa
Location: Pisa
Country: Italy
From: 2013 To: 2014

All Publications
2020
Heidarlou M.A., Paletti P., Jariwala B., Robinson J.A., Fullerton-Shirey S.K., Seabaugh A.C.
Batch-Fabricated WSe-on-Sapphire Field-Effect Transistors Grown by Chemical Vapor Deposition
IEEE Transactions on Electron Devices, vol. 67, (no. 4), pp. 1839-1844
Article Journal
2020
Fathipour S., Paletti P., Fullerton-Shirey S.K., Seabaugh A.C.
Electric-double-layer p–i–n junctions in WSe2
Scientific Reports, vol. 10, (no. 1)
2020
Liu M., Wei S., Shahi S., Jaiswal H.N., Paletti P., Fathipour S., Remskar M., Jiao J., Hwang W., Yao F., Li H.
Enhanced carrier transport by transition metal doping in WS2field effect transistors
Nanoscale, vol. 12, (no. 33), pp. 17253-17264
2020
Paletti P., Fathipour S., Remskar M., Seabaugh A.
Quantitative, experimentally-validated, model of MoS2 nanoribbon Schottky field-effect transistors from subthreshold to saturation
Journal of Applied Physics, vol. 127, (no. 6)
Article Journal
2019
Seabaugh A., Paletti P., Palit A., Gonzalez-Serrano K., Pandey P.
Dynamics of ferroelectric and ionic memories: Physics and applications
Proceedings of International Conference on ASIC
Conference Paper Conference