The realization of low-cost optoelectronic devices in the visible range and their introduction in the consumer electronics market has drastically changed the way we interact, live and communicate today, with digital image sensors and solid-state lighting being only a few examples. On the other hand, in the near and short-wave infrared (NIR-SWIR) wavelengths, the high production costs of the active materials have curbed their application to only a limited number of niche and military applications. The availability of a scalable, low-cost and high-performance optoelectronic technology in the IR would enable a range of applications in optical communications (via light emitting diodes, LEDs, and lasers), solar concentrators, biomedical imaging, automotive safety, autonomous vehicles, and others.[1-5] By guaranteeing compatibility with highvolume, consumer electronics markets, the successful outcome of this project will have a direct and significant impact on quality of life, health, and security.The NIR-SWIR range, in particular the 800-1600nm range, has been traditionally served by epitaxial III-V semiconductors (mainly InGaAs) that cannot be integrated into silicon electronics monolithically.[6] The incompatibility of such epitaxial structures with complementary metal-oxide semiconductor (CMOS) technology, combined with their high gr owth costs and low throughput manufacturing, have curtailed the introduction of SWIR emitting devices in the consumer electronics market (Figure 1).[7] In this context, colloidal Quantum Dots (QDs) have emerged as a revolutionary low-cost, CMOS compatible material platform. Furthermore, the extraordinary optical properties of QDs (above all the strong and tunable light emission with narrow linewidth) can be leveraged for facile bandgap tunability through quantum confinement, shape control, and, in some cases, via composition control. Highly performing QD optoelectronics have been developed for light emission and photodetection applications across the visible, NIR and SWIR ranges. A fundamental roadblock exists however to transform this approach into a key enabling technology for future industrial uptake. The SWIR QD devices developed thus far rely upon the use of II-VI and IV-VI semiconductors based on Pb and Hg-chalcogenides.[2-4] Unfortunately, Pb and Hg are elements that fall under RoHS (restriction of hazardous substances) regulations which prevent their deployment in commercial consumer applications.[8,9] IRIDE’s vision is to develop a whole new material platform based on high-quality colloidal III-V QDs, with a focus on InAs, that are RoHS compliant and competitive to the costly epitaxial materials currently employed in SWIR devices (Figure 1). Capitalizing on this achievement, our project will provide proof-of-principle NIR-SWIR light emitters with unprecedented performance and will pave the way towards printable infrared optoelectronics.