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Camilla Coletti Write a Message

Researcher TT (TT1)

Contacts

Piazza San Silvestro,12

About

Education

December 2007: Ph.D. in Electrical Engineering at the University of South Florida, Tampa, FL, USA with the dissertation: “Silicon Carbide Biocompatibility, Surface Control and Electronic Cellular Interaction for Biosensing Applications”.  

July 2004: Laurea (M.S.) in Electrical Engineering at the University of Perugia, Italy, with the thesis: “Characterization of Scanning Spreading Resistance Microscopy (SSRM) Measurements by Device Simulation” performed in collaboration with the Swiss Federal Institute of Technology (ETH) of Zurich, Switzerland (grade: 110/110 cum laude).

July 1998: Scientific Lyceum Diploma from the "Liceo Scientifico L. Salvatorelli", Marsciano (PG), Italy (grade: 60/60).

Experience

Apr 2014 to present: Researcher, Center for Nanoyechnology Innovation @ NEST, Istituto Italiano di Tecnologia, Pisa, Italy.

April 2011 to Mar 2014: Senior Postdoc, Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia, Pisa, Italy.

March 2008 to March 2011: Postdoc (Alexander von Humboldt Postdoctoral Fellowship), Interface Analysis Group, Max Planck Institute for Solid State Research, Stuttgart, Germany.

January 2005 to December 2007: Graduate Research Assistant, Electrical Engineering Department, University of South Florida, Tampa, FL, USA.

January 2004 to June 2004: Masters Student, Integrated Systems Laboratory, Swiss Federal Institute of Technology (ETH), Zurich, Switzerland.

Projects

Camilla Coletti is currently leading the Graphene Growth Lab of CNI@NEST. Coletti's research projects are: graphene for hydrogen storage; covalent and non-covalent functionalization of graphene; graphene implantable electrodes.

Selected Publications

N. Mishra, V. Miseikis, D. Convertino, M. Gemmi, V. Piazza, C. Coletti, "Rapid and catalyst-free van der Waals epitaxy of graphene on hexagonal boron nitride", Carbon, Volume 96, Pages 497–502 (2016).

D. Spirito, S. Kudera, V. Miseikis, C. Giansante, C. Coletti, R. Krahne, "UV Light Detection from CdS Nanocrystal Sensitized Graphene Photodetectors at kHz Frequencies, ", J. Phys. Chem. C119 (42), pp 23859–23864 (2015).

F. Bianco, D. Perenzoni, D. Convertino, S.L. De Bonis, D. Spirito, M. Perenzoni, C. Coletti, M.S. Vitiello, A. Tredicucci, “Terahertz detection by epitaxial-graphene field-effect-transistors on silicon carbide”, Applied Physics Letters 107 (13), 131104 (2015).

S. Zanotto, C. Lange, T. Maag, A. Pitanti, V. Miseikis, C. Coletti, R. Degl'Innocenti, L. Baldacci, R. Huber, A. Tredicucci, “Magneto-optic transmittance modulation observed in a hybrid graphene–split ring resonator terahertz metasurface”, Applied Physics Letters 107 (12), 121104 (2015).

F. Bianco, V. Miseikis, D. Convertino, J.-H. Xu, F. Castellano, H. E. Beere, D. A. Ritchie, M. S. Vitiello, A. Tredicucci, C. Coletti, “THz saturable absorption in turbostratic multilayer graphene on silicon carbide”, Optics Express 23 (9), 11632-11640 (2015).

A. Iagallo, S. Tanabe, S. Roddaro, M. Takamura, Y. Sekine, H. Hibino, V. Miseikis, C. Coletti, V. Piazza, F. Beltram, S. Heun, "Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene", Semicond. Sci. Technol. 30 055007 (2015).

A. Candini, N. Richter, D. Convertino, C. Coletti, F. Balestro, W. Wernsdorfer, M. Kläui, M. Affronte, "Electroburning of few-layer graphene flakes, epitaxial graphene, and turbostratic graphene discs in air and under vacuum", Beilstein J. Nanotechnol. 6, 711-719 (2015).

T. Mashoff, D. Convertino, V. Miseikis, C. Coletti, V. Piazza, F. Beltram, S. Heun, “Increasing the active surface of titanium islands on graphene by nitrogen sputtering”, Appl. Phys. Lett. 106, 083901 (2015).

V. Miseikis, D. Convertino, N. Mishra, M. Gemmi, T. Mashoff, S. Heun, N. Haghighian, F. Bisio, M. Canepa, V. Piazza, C. Coletti, “Rapid CVD growth of millimetre-sized single crystal graphene using a cold-wall reactor", 2D Materials 2 (1), 014006 (2015).

C. Coletti, “Revealing the electronic band structure of trilayer graphene on SiC”, Il Nuovo Cimento C 37 (4), 93-100 (2014).

C. Coletti, S. Forti, A. Principi, K.V. Emtsev, A.A. Zakharov, K.M. Daniels, B.K. Daas, M.V.S. Chandrashekhar, A. H. MacDonald, M. Polini, U. Starke, MRS proceedings Vol. 1693 (2014).

C. Coletti, S. Forti, A. Principi, K.V. Emtsev, A.A. Zakharov, K.M. Daniels, B.K. Daas, M.V.S. Chandrashekhar, T. Ouisse, D. Chaussende, A. H. MacDonald, M. Polini, U. Starke, “Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study”, Phys. Rev. B, 88, 155439 (2013).

S. Goler, C. Coletti, V. Tozzini, V. Piazza, T. Mashoff, F. Beltram, V. Pellegrini, S. Heun, “Influence of graphene curvature on hydrogen adsortpion: towards hydrogen storage devices”, Journal of Physical Chemistry C, 177 (22), pp. 11506-11513 (2013). 

S. Goler, C. Coletti, V. Pellegrini, K. V. Emtsev, S. Forti, U. Starke, F. Beltram, S. Heun, "Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene", Carbon, Volume 51, pp. 249–254 (2013).

U. Starke, S. Forti, K.V. Emtsev, C. Coletti, “Engineering the electronic structure of epitaxial graphene by transfer doping and atomic intercalation”, MRS Bulletin, Volume 37 (12), pp. 1177-1186 (2012).

U. Starke, C. Coletti, K.V. Emtsev, A.A. Zakharov, T. Ouisse, and D. Chaussende, "Large area quasi-free standing monolayer graphene on 3C-SiC(111)", Materials Science Forum, Vol. 717-720, pp 617-620 (2012).

C. Coletti, S. Forti, K. V. Emtsev, U. Starke, “Tailoring the electronic structure of epitaxial graphene on SiC(0001): transfer doping and hydrogen intercalation,” GraphITA 2011, Carbon Nanostructures, pp. 39-49, Springer (2012).

S. Forti, K.V. Emtsev, C. Coletti, A.A. Zakharov, U. Starke, “Large-area homogeneous quasifree standing epitaxial graphene on SiC(0001): Electronic and structural characterization”, Phys. Rev. B 84, 125449 (2011).

K.V. Emtsev, A.A. Zakharov, C. Coletti, S. Forti, U. Starke, “Ambipolar doping in quasi-free epitaxial graphene on SiC(0001) controlled by Ge intercalation”, Phys. Rev. B 84, 125423 (2011).

C. Coletti, K.V. Emtsev, A.A. Zakharov, T. Ouisse, D. Chaussende and U. Starke, “Large area quasi-free standing graphene on 3C-SiC(111),” Appl. Phys. Lett. 99, 081904 (2011).

A. Oliveros, C. Coletti, C. Frewin, C. Locke, U. Stake, S.E. Saddow, “Cellular interactions on epitaxial graphene on SiC(0001) substrates”, Materials Science Forum, Vol. 679-680, pp 831-834 (2011).

S.E Saddow, C.L. Frewin, C. Coletti, N. Schettini, A. Oliveros, M. Jarosezski, “Single-crystal silicon carbide: a biocompatible and hemocompatible semiconductor for advanced biomedical applications”, Materials Science Forum, Vol. 679-680, pp 824-830 (2011).

C. Riedl, C. Coletti, U. Starke, “Structural and electronic properties of epitaxial graphene on SiC(0001): a review of growth, characterization, transfer doping and hydrogen intercalation”, J. Phys. D: Appl. Phys. 43 374009 (2010).

C. Coletti, C. Riedl, D.S. Lee, B. Krauss, K. von Klitzing, J. Smet, U. Starke, “Band structure engineering of epitaxial graphene on SiC by molecular doping“, Physical Review B, 81 (23), 235401 (2010).

C. Riedl, C. Coletti, T. Iwasaki, A.A. Zakharov, and U. Starke, “Hydrogen intercalation below epitaxial graphene on SiC(0001)”, Materials Science Forum 645-648, pp 623-628 (2010).

S.E Saddow, C. Coletti, C.L. Frewin, N. Schettini, A. Oliveros, M. Jarosezski, “Single-crystal silicon carbide: a biocompatible and hemocompatible semiconductor for advanced biomedical applications”, Mater. Res. Soc. Symp. Proc., Vol. 1246, pp. 193-198 (2010).

C. Riedl, C. Coletti, T. Iwasaki, A. A. Zakharov, U. Starke, “Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation”, Physical Review Letters, 103 (24), 24684 (2009).

C.L. Frewin, C. Coletti, C. Riedl, U. Starke, S.E. Saddow, “A Comprehensive Study of Hydrogen Etching on the Major SiC Polytypes and Crystal Orientations,” Materials Science Forum 615-617, 589-592 (2009).

C. Coletti, C.L. Frewin, A.M. Hoff, S.E. Saddow, “Surface passivation of 3C-SiC(001) by hydrogen treatment”, Electrochemical and Solid-State Letters, 11 (10), H285-H287 (2008).

C. Coletti, S.E. Saddow, M. Hetzel, C. Virojanadara, and U. Starke, “Surface studies of H2-etched 3C-SiC(001) on Si(001),” Appl. Phys. Lett., 91, 061914 (2007).

C. Coletti, M. J. Jaroszeski, A. Pallaoro, A. M. Hoff, S. Iannotta and S. E. Saddow, “Biocompatibility and wettability of crystalline SiC and Si surfaces,” Conf Proc IEEE Eng Med Biol Soc. 2007, 5850-3 (2007).

C. Coletti, M. J. Jaroszeski, A. M. Hoff and S.E. Saddow, “Culture of mammalian cells on single crystal SiC substrates,” Mater. Res. Soc. Symp. Proc., 950 (2007).

C. Coletti, M. Hetzel, C. Virojanadara, U. Starke, and S. E. Saddow, “Surface morphology and structure of hydrogen etched 3C-SiC(001) on Si(001),” Mater. Res. Soc. Symp. Proc., 911, 131 (2006).

S. Soubatch, W. Y. Lee, M. Hetzel, C. Virojanadara, C. Coletti, S. E. Saddow and U. Starke, “Atomic Structure of Non-Basal-Plane SiC Surfaces: Hydrogen Etching and Surface Phase Transformations,” Mater. Res. Soc. Symp. Proc., 911, 271 (2006).

U. Starke, W.Y. Lee, C. Coletti, S.E. Saddow, R.P. Devaty and W.J. Choyke, “SiC Pore Surfaces: Surface Studies of 4H-SiC (-1102) and 4H-SiC (-110 -2),” Materials Science Forum, Vol. 527-529, 677-680 (2006).

U. Starke, W.Y. Lee, C. Coletti, S.E. Saddow, R.P. Devaty, and W.J. Choyke, “SiC Pore Surfaces: Surface Studies of 4H-SiC (-1102) and 4H-SiC (-110 -2),” Appl. Phys. Lett., 88 (3), 031915 (2006).

Patents

C. L. Frewin, S. E. Saddow, C. Coletti, “Graphene electrodes on planar silicon carbide long term implantable prosthetic device”, US Patent, Patent No. US 8751015 B2 (2014).

C. L. Frewin, S. E. Saddow, C. Coletti, “Graphene electrodes on planar silicon carbide long term implantable prosthetic device”, WO Patent, Patent No. 2012075120 (2012).

Books

Chapter 7 in "Carbon for Sensing Devices", Edited by D. Demarchi, A Tagliaferro, Springer (2015).

Chapter 6 and Chapter 14 of “Silicon Carbide biotechnology – A biocompatible semiconductor for advanced biomedical devices and applications” Edited by S.E. Saddow, Elsevier Science (2011).

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I numeri di IIT

L’Istituto Italiano di Tecnologia (IIT) è una fondazione di diritto privato - cfr. determinazione Corte dei Conti 23/2015 “IIT è una fondazione da inquadrare fra gli organismi di diritto pubblico con la scelta di un modello di organizzazione di diritto privato per rispondere all’esigenza di assicurare procedure più snelle nella selezione non solo nell’ambito nazionale dei collaboratori, scienziati e ricercatori ”.

IIT è sotto la vigilanza del Ministero dell'Istruzione, dell'Università e della Ricerca e del Ministero dell'Economia e delle Finanze ed è stato istituito con la Legge 326/2003. La Fondazione ha l'obiettivo di promuovere l'eccellenza nella ricerca di base e in quella applicata e di favorire lo sviluppo del sistema economico nazionale. La costruzione dei laboratori iniziata nel 2006 si è conclusa nel 2009.

Lo staff complessivo di IIT conta circa 1440 persone. L’area scientifica è rappresentata da circa l’85% del personale. Il 45% dei ricercatori proviene dall’estero: di questi, il 29% è costituito da stranieri provenienti da oltre 50 Paesi e il 16% da italiani rientrati. Oggi il personale scientifico è composto da circa 60 principal investigators, circa 110 ricercatori e tecnologi di staff, circa 350 post doc, circa 500 studenti di dottorato e borsisti, circa 130 tecnici. Oltre 330 posti su 1400 creati su fondi esterni. Età media 34 anni. 41% donne / 59 % uomini.

Nel 2015 IIT ha ricevuto finanziamenti pubblici per circa 96 milioni di euro (80% del budget), conseguendo fondi esterni per 22 milioni di euro (20% budget) provenienti da 18 progetti europei17 finanziamenti da istituzioni nazionali e internazionali, circa 60 progetti industriali

La produzione di IIT ad oggi vanta circa 6990 pubblicazioni, oltre 130 finanziamenti Europei e 11 ERC, più di 350 domande di brevetto attive, oltre 12 start up costituite e altrettante in fase di lancio. Dal 2009 l’attività scientifica è stata ulteriormente rafforzata con la creazione di dieci centri di ricerca nel territorio nazionale (a Torino, Milano, Trento, Parma, Roma, Pisa, Napoli, Lecce, Ferrara) e internazionale (MIT ed Harvard negli USA) che, unitamente al Laboratorio Centrale di Genova, sviluppano i programmi di ricerca del piano scientifico 2015-2017.

IIT: the numbers

Istituto Italiano di Tecnologia (IIT) is a public research institute that adopts the organizational model of a private law foundation. IIT is overseen by Ministero dell'Istruzione, dell'Università e della Ricerca and Ministero dell'Economia e delle Finanze (the Italian Ministries of Education, Economy and Finance).  The Institute was set up according to Italian law 326/2003 with the objective of promoting excellence in basic and applied research andfostering Italy’s economic development. Construction of the Laboratories started in 2006 and finished in 2009.

IIT has an overall staff of about 1,440 people. The scientific staff covers about 85% of the total. Out of 45% of researchers coming from abroad 29% are foreigners coming from more than 50 countries and 16% are returned Italians. The scientific staff currently consists of approximately 60 Principal Investigators110 researchers and technologists350 post-docs and 500 PhD students and grant holders and 130 technicians. External funding has allowed the creation of more than 330 positions . The average age is 34 and the gender balance proportion  is 41% female against 59% male.

In 2015 IIT received 96 million euros in public funding (accounting for 80% of its budget) and obtained 22 million euros in external funding (accounting for 20% of its budget). External funding comes from 18 European Projects, other 17 national and international competitive projects and approximately 60 industrial projects.

So far IIT accounts for: about 6990 publications, more than 130 European grants and 11 ERC grants, more than 350 patents or patent applications12 up start-ups and as many  which are about to be launched. The Institute’s scientific activity has been further strengthened since 2009 with the establishment of 11 research nodes throughout Italy (Torino, Milano, Trento, Parma, Roma, Pisa, Napoli, Lecce, Ferrara) and abroad (MIT and Harvard University, USA), which, along with the Genoa-based Central Lab, implement the research programs included in the 2015-2017 Strategic Plan.